BZV55-C4V3
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Zener (Nom) (Vz) | 4.3V |
| Voltage - Forward (Vf) (Max) @ If | 900mV @ 10mA |
| Current - Reverse Leakage @ Vr | 3µA @ 1V |
| Допустимые отклонения емкости | ±5% |
| Power - Max | 500mW |
| Impedance (Max) (Zzt) | 90 Ohm |
| Тип монтажа | Поверхностный |
| Корпус (размер) | SOD-80C |
| Корпус | LLDS; MiniMelf |
| Рабочая температура | -65°C ~ 200°C |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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BZV55 (Стабилитроны) Zener Diodes Также в этом файле: BZV55-C4V3, BZV55-C4V3
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 91 596 | 1.61 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 357 568 | 1.47 | ||
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1N4007 |
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DIOTEC | 71 820 | 2.81 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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1N4007 |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 351 402 | 1.26 | ||
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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1N4007 |
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MICRO COMMERCIAL COMPONENTS |
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1N4007 |
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MOTOROLA |
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1N4007 |
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YJ ELE-NIC CORP |
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1N4007 |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 800 | 4.54 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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43 140 |
1.66 >100 шт. 0.83 |
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 2 123 | 1.03 | ||
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1N4007 |
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HOTTECH | 121 536 |
2.00 >100 шт. 1.00 |
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1N4007 |
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KLS | 40 800 | 2.07 | ||
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1N4007 |
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YS | 2 311 | 1.36 | ||
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1N4007 |
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YANGJIE | 79 920 | 1.46 | ||
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1N4007 |
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YANGJIE (YJ) |
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1N4007 |
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MC |
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1N4007 |
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FAIRCHILD |
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1N4007 |
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WUXI XUYANG |
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1N4007 |
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KUU | 16 |
0.99 >500 шт. 0.33 |
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1N4007 |
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CHINA |
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1N4007 |
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SUNRISETRON |
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1N4007 |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1N4007 |
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1 |
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1N4007 |
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BL |
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1N4007 |
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SUNTAN | 54 981 | 1.21 | ||
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1N4007 |
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TWGMC | 49 156 |
1.05 >500 шт. 0.35 |
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1N4007 |
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CTK |
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1N4007 |
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JUXING | 85 | 1.69 | ||
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1N4007 |
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ASEMI | 1 | 1.06 | ||
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1N4007 |
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YANGZHOU YANGJIE |
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1N4007 |
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KEEN SIDE | 178 |
1.14 >100 шт. 0.57 |
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| 1N4944 400V | 10 873 | 1.47 | ||||||
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MBR20100CTG |
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2 диода Шоттки (общий катод, U=100V, I=20A (2х10А), Vf=0.75V@10A, -65 to +150C) | ON SEMICONDUCTOR | 1 | 67.80 | |
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MBR20100CTG |
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2 диода Шоттки (общий катод, U=100V, I=20A (2х10А), Vf=0.75V@10A, -65 to +150C) | ONS |
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MBR20100CTG |
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2 диода Шоттки (общий катод, U=100V, I=20A (2х10А), Vf=0.75V@10A, -65 to +150C) | ONSEMICONDUCTOR |
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MBR20100CTG |
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2 диода Шоттки (общий катод, U=100V, I=20A (2х10А), Vf=0.75V@10A, -65 to +150C) | ON SEMICONDUCTO |
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MBR20100CTG |
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2 диода Шоттки (общий катод, U=100V, I=20A (2х10А), Vf=0.75V@10A, -65 to +150C) |
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MBR20100CTG |
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2 диода Шоттки (общий катод, U=100V, I=20A (2х10А), Vf=0.75V@10A, -65 to +150C) | KOME |
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TOP226Y |
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SMPS сх. упpавления, MOSFET 700V, Pout=125W max | PWR |
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TOP226Y |
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SMPS сх. упpавления, MOSFET 700V, Pout=125W max | 9 | 277.50 | |||
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TOP226Y |
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SMPS сх. упpавления, MOSFET 700V, Pout=125W max | Power Integrations |
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TOP226Y |
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SMPS сх. упpавления, MOSFET 700V, Pout=125W max | 4-7 НЕДЕЛЬ | 166 |
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| VS-30BQ100-M3/9AT | VISHAY | 38 821 | 40.96 | |||||
| VS-30BQ100-M3/9AT | 6 160 | 17.02 | ||||||
| VS-30BQ100-M3/9AT | VISHAY IR | 1 | 118.84 |
