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Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 1A, 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 1.52A |
| Vgs(th) (Max) @ Id | 600mV @ 1mA |
| Gate Charge (Qg) @ Vgs | 8.8nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 500pF @ 9.6V |
| Power - Max | 417mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | SC-74, SOT-457 |
| Корпус | 6-TSOP |
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BSH207 (MOSFET) P-channel enhancement mode MOS transistor
Производитель:
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