IRFD9120
Транзистор полевой P-MOS 100V, 1A, 1W
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Версия для печати
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 600mA, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 1A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 18nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 390pF @ 25V |
| Power - Max | 1.3W |
| Тип монтажа | Выводной |
| Корпус (размер) | 4-DIP (0.300", 7.62mm) |
| Корпус | 4-DIP, Hexdip, HVMDIP |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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IRFD9120 Power Mosfet (vdss=-100v, Rds (on) =0.60ohm, Id=-1.0a)
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 30 400 | 2.24 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 397 198 | 2.52 | ||
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1N4007 |
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DIOTEC | 61 836 | 3.20 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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1N4007 |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 42 166 | 2.69 | ||
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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1N4007 |
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MICRO COMMERCIAL COMPONENTS |
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1N4007 |
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MOTOROLA |
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1N4007 |
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YJ ELE-NIC CORP |
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1N4007 |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 800 | 5.47 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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3 589 | 3.72 | |||
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 22 | 1.68 | ||
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1N4007 |
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HOTTECH | 58 304 |
1.22 >100 шт. 0.61 |
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1N4007 |
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KLS | 120 | 2.07 | ||
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1N4007 |
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YS | 2 311 | 1.21 | ||
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1N4007 |
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YANGJIE | 44 896 | 1.56 | ||
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1N4007 |
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YANGJIE (YJ) |
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1N4007 |
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MC |
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1N4007 |
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FAIRCHILD | 616 | 1.21 | ||
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1N4007 |
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WUXI XUYANG |
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1N4007 |
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KUU |
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1N4007 |
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CHINA |
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1N4007 |
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SUNRISETRON |
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1N4007 |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1N4007 |
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1 |
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1N4007 |
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BL |
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1N4007 |
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SUNTAN | 517 | 1.30 | ||
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1N4007 |
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TWGMC | 75 956 | 1.08 | ||
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1N4007 |
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CTK |
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1N4007 |
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JUXING |
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1N4007 |
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ASEMI |
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1N4007 |
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YANGZHOU YANGJIE |
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1N4007 |
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KEEN SIDE | 229 759 |
1.22 >100 шт. 0.61 |
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1N4007 |
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MERRYELC |
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1N4007 |
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82582 |
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1N4007 |
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81682 |
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1N4007 |
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TRR | 361 903 |
1.38 >100 шт. 0.69 |
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1N4007 |
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71682 |
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| 2EDGVC-5.08-03P-14-00A(H) | DEGSON ELECTRONICS |
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DB156S |
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Мост 1.5А, 800В, SMD | DC COMPONENTS | 5 027 | 6.70 | ||
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DB156S |
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Мост 1.5А, 800В, SMD | 4 439 | 4.28 | |||
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DB156S |
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Мост 1.5А, 800В, SMD | ТАЙВАНЬ(КИТАЙ) |
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DB156S |
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Мост 1.5А, 800В, SMD | YJ | 141 | 11.89 | ||
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DB156S |
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Мост 1.5А, 800В, SMD | КИТАЙ |
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DB156S |
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Мост 1.5А, 800В, SMD | KINGTRONICS |
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DB156S |
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Мост 1.5А, 800В, SMD | YANGJIE |
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DB156S |
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Мост 1.5А, 800В, SMD | YANGJIE (YJ) |
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DB156S |
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Мост 1.5А, 800В, SMD | SEP |
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DB156S |
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Мост 1.5А, 800В, SMD | YANGZHOU YANGJIE |
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IRFD110 |
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Транзистор полевой | INTERNATIONAL RECTIFIER |
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IRFD110 |
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Транзистор полевой | VISHAY |
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IRFD110 |
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Транзистор полевой | 36 | 55.80 | ||
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IRFD110 |
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Транзистор полевой | Vishay/Siliconix |
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IRFD110 |
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Транзистор полевой | ФИЛИППИНЫ |
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IRFD110 |
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Транзистор полевой | SILICONIX | 28 |
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| SK 104 38.1 STS | FISCHER | 334 | 506.56 | |||||
| SK 104 38.1 STS |
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