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Версия для печати
| Gate Charge (Qg) @ Vgs | 15nC @ 5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 4.3A |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 4.3A, 4.5V |
| FET Feature | Diode (Isolated) |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | FETKY™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 1066pF @ 10V |
| Power - Max | 1.25W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Корпус | Micro8™ |