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Версия для печати
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 11A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 4030pF @ 25V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
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IRF7424 (MOSFET) HEXFET Power MOSFETs Discrete P-Channel
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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AD5664RBRMZ-3 |
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Analog Devices Inc |
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AD5664RBRMZ-3 |
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3 127.20 | |||
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AD5664RBRMZ-3 |
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ANALOG DEVICES |
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AD5664RBRMZ-3 |
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4-7 НЕДЕЛЬ | 228 |
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IRF7457 |
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Hexfet power mosfets discrete n-channel | INTERNATIONAL RECTIFIER |
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IRF7457 |
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Hexfet power mosfets discrete n-channel |
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128.16 | ||
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IRF7457 |
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Hexfet power mosfets discrete n-channel | INFINEON |
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| LD1117DT12TR | ST MICROELECTRONICS |
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| OPA340NA | TEXAS INSTRUMENTS |
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