| Корпус | DIRECTFET™ MT |
| Корпус (размер) | DirectFET™ Isometric MT |
| Power - Max | 1.8W |
| Тип монтажа | Поверхностный |
| Input Capacitance (Ciss) @ Vds | 6290pF @ 10V |
| Gate Charge (Qg) @ Vgs | 69nC @ 4.5V |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 31A |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) @ Id, Vgs | 2 mOhm @ 31A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Other Related Documents | DirectFET MOSFET 4Ps Checklist |
Версия для печати
