BTA41-800
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Triac Type | Standard |
| Тип монтажа | Выводной |
| Конфигурация | Single |
| Current - Hold (Ih) (Max) | 80mA |
| Voltage - Off State | 800V |
| Current - Gate Trigger (Igt) (Max) | 50mA |
| Current - Non Rep. Surge 50, 60Hz (Itsm) | 400A, 420A |
| Current - On State (It (RMS)) (Max) | 40A |
| Voltage - Gate Trigger (Vgt) (Max) | 1.3V |
| Корпус | TOP3 |
| Корпус (размер) | TOP-3 Insulated |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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1N4007 |
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DC COMPONENTS | 48 234 |
1.96 >100 шт. 0.98 |
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 447 385 | 1.47 | ||
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1N4007 |
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DIOTEC | 77 412 | 3.04 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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1N4007 |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 167 546 |
1.86 >100 шт. 0.93 |
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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1N4007 |
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MICRO COMMERCIAL COMPONENTS |
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1N4007 |
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MOTOROLA |
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1N4007 |
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YJ ELE-NIC CORP |
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1N4007 |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 800 | 4.54 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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184 205 |
1.66 >100 шт. 0.83 |
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 22 451 | 1.03 | ||
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1N4007 |
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HOTTECH | 137 512 | 1.23 | ||
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1N4007 |
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KLS | 52 000 | 2.07 | ||
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1N4007 |
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YS | 2 311 | 1.36 | ||
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1N4007 |
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YANGJIE | 800 | 1.58 | ||
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1N4007 |
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YANGJIE (YJ) |
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1N4007 |
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MC |
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1N4007 |
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FAIRCHILD |
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1N4007 |
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WUXI XUYANG |
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1N4007 |
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KUU |
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1N4007 |
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CHINA | 14 461 | 1.09 | ||
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1N4007 |
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SUNRISETRON |
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1N4007 |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1N4007 |
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1 |
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1N4007 |
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BL |
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1N4007 |
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SUNTAN | 72 314 | 1.97 | ||
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1N4007 |
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TWGMC | 23 608 |
1.05 >500 шт. 0.35 |
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1N4007 |
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CTK |
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1N4007 |
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JUXING | 93 | 1.59 | ||
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1N4007 |
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ASEMI | 987 | 1.13 | ||
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1N4007 |
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YANGZHOU YANGJIE |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | MICRO SEMICONDUCTOR |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | EIC |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | ON SEMICONDUCTOR |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | DC COMPONENTS | 7 568 | 10.27 | |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | SMK |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | DIOTEC |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | ST MICROELECTRONICS |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | ONS |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | 4 819 | 6.50 | ||
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | OTHER | 3 |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | DIOTEC SEMICONDUCTOR |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | Microsemi Commercial Components Group |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | MULTICOMP |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | KLS |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | HOTTECH |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | MIC |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | 1 |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | SUNTAN | 3 836 | 7.85 | |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | LGE |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% |
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1N5349B |
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Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5% | SENOCN | 24 | 7.99 | |
| 2PM14-4ZKQB2 | ТАЙВАНЬ(КИТАЙ) |
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| 2PM14-4ZKQB2 | POLSUN |
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| 2PM14-4ZKQB2 | POL-SUN | 281 | 136.47 | |||||
| BT152-800 |
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||||||
| RC0402FR-07510RL | YAGEO | 645 826 |
0.40 >1000 шт. 0.08 |
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| RC0402FR-07510RL | YAGEO | 6 666 |
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| RC0402FR-07510RL |
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