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Версия для печати
| Корпус | MT-1-A1 |
| Корпус (размер) | MT-1 |
| Тип монтажа | Выводной |
| Frequency - Transition | 200MHz |
| Power - Max | 600mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 10mA, 10V |
| Current - Collector Cutoff (Max) | 1µA |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 500mA |
| Transistor Type | NPN |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
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2SD1992A (Универсальные биполярные транзисторы) Silicon Npn Epitaxial Planer Type
Производитель:
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