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Версия для печати
| Корпус | NS-B1 |
| Корпус (размер) | NS-B1 |
| Тип монтажа | Выводной |
| Frequency - Transition | 200MHz |
| Power - Max | 300mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Current - Collector (Ic) (Max) | 500mA |
| Transistor Type | NPN |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
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2SD1450 (Универсальные биполярные транзисторы) Silicon NPN epitaxial planer type For low-frequency amplification
Производитель:
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