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Версия для печати
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 10 Ohm @ 500mA, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 180mA |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Gate Charge (Qg) @ Vgs | 1.43nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 60pF @ 25V |
| Power - Max | 800mW |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-226-3, TO-92-3 (TO-226AA) |
| Корпус | TO-92-3 |