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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 6V |
| Power - Max | 500mW |
| Frequency - Transition | 100MHz |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-226-3, TO-92-3 (TO-226AA) |
| Корпус | TO-92-3 |
| Product Change Notification | Fe Wire Change 12/Oct/2007 |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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2SB1560 |
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Транзистор S-P-DAR 10A 160В TO3P | SK |
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2SB1560 |
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Транзистор S-P-DAR 10A 160В TO3P | SANKEN |
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2SB1560 |
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Транзистор S-P-DAR 10A 160В TO3P |
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244.00 | |||
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2SB1560 |
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Транзистор S-P-DAR 10A 160В TO3P | КИТАЙ |
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2SB1560 |
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Транзистор S-P-DAR 10A 160В TO3P | ISCSEMI |
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2SC3964 | TOSHIBA |
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2SC3964 |
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75.60 | |||||
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2SC3964 | TOS |
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2SD2390 |
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NPN Hi-Fi, Darl 150V, 10A, 100W, 55MHz, B>5000 (Comp. 2SB1560) | SANKEN |
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2SD2390 |
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NPN Hi-Fi, Darl 150V, 10A, 100W, 55MHz, B>5000 (Comp. 2SB1560) | SK |
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2SD2390 |
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NPN Hi-Fi, Darl 150V, 10A, 100W, 55MHz, B>5000 (Comp. 2SB1560) |
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248.40 | |||
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2SD2390 |
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NPN Hi-Fi, Darl 150V, 10A, 100W, 55MHz, B>5000 (Comp. 2SB1560) | КИТАЙ |
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2SD2390 |
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NPN Hi-Fi, Darl 150V, 10A, 100W, 55MHz, B>5000 (Comp. 2SB1560) | ISCSEMI |
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| HZS3C3TD | HITACHI SEMICONDUCTOR |
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| HZS3C3TD | HITACHI SEMICONDUCTOR |
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KTC3200 |
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NPN 120V, 0.1A, 625mW, 100MHz (Comp. KTA1268) | KEC |
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KTC3200 |
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NPN 120V, 0.1A, 625mW, 100MHz (Comp. KTA1268) | 8 | 15.84 | |||
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KTC3200 |
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NPN 120V, 0.1A, 625mW, 100MHz (Comp. KTA1268) | КИТАЙ |
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