| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 3A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Power - Max | 1.56W |
| Frequency - Transition | 3MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | DPAK-3 |
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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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BD237 |
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Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
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29.56
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BD237 |
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Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
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ST MICROELECTRONICS
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BD237 |
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Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
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ON SEMICONDUCTOR
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BD237 |
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Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
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ON SEMICONDUCTOR
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9
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BD237 |
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Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
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ST MICROELECTRONICS SEMI
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BD237 |
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Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
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STMicroelectronics
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BD237 |
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Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
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CDIL
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BD237 |
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Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
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ST MICROELECTRO
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BD237 |
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Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
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HOTTECH
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80
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10.10
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BD237 |
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Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
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JSCJ
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7 357
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5.90
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IRF7341 |
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Транзистор полевой N-канальный MOSFET (55V, 4.7A, 2W)
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INTERNATIONAL RECTIFIER
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19
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37.80
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IRF7341 |
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Транзистор полевой N-канальный MOSFET (55V, 4.7A, 2W)
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1 888
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22.83
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IRF7341 |
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Транзистор полевой N-канальный MOSFET (55V, 4.7A, 2W)
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INTERNATIONAL RECTIFIER
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IRF7341 |
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Транзистор полевой N-канальный MOSFET (55V, 4.7A, 2W)
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ФИЛИППИНЫ
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IRF7341 |
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Транзистор полевой N-канальный MOSFET (55V, 4.7A, 2W)
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INFINEON
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IRF7341 |
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Транзистор полевой N-канальный MOSFET (55V, 4.7A, 2W)
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SLKOR
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1 858
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19.40
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IRU1117-33CY |
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СН ``low drop`` ( Vinmax=7V, Vout=3.3V, tol=1%, I=0.8A)
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INTERNATIONAL RECTIFIER
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IRU1117-33CY |
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СН ``low drop`` ( Vinmax=7V, Vout=3.3V, tol=1%, I=0.8A)
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106.00
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IRU1117-33CY |
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СН ``low drop`` ( Vinmax=7V, Vout=3.3V, tol=1%, I=0.8A)
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4-7 НЕДЕЛЬ
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428
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MJD32CT4 |
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MOTOROLA
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MJD32CT4 |
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ST MICROELECTRONICS
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MJD32CT4 |
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MJD32CT4 |
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MOTOROLA
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1 295
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MJD32CT4 |
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ST MICROELECTRONICS SEMI
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MJD32CT4 |
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STMicroelectronics
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MJD32CT4 |
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ON Semiconductor
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MJD32CT4 |
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ON SEMICONDUCTOR
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1 060
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ULN2003 D16 |
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UTC
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