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Версия для печати
| Серия | TrenchMOS™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 25A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Gate Charge (Qg) @ Vgs | 42nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 4100pF @ 10V |
| Power - Max | 62.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | SC-100, SOT-669 |
| Корпус | LFPAK |
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PH3230S (MOSFET) N-channel Trenchmos (tm) logic level FET
Производитель:
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