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Версия для печати
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | QFET™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 185 mOhm @ 4.7A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 9.4A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 550pF @ 25V |
| Power - Max | 2.5W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-251-3 Short Leads, IPak, TO-251AA |
| Корпус | I-Pak |
| Product Change Notification | Lead Dimension Change 23/Jan/2007 |
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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1N4007 |
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DC COMPONENTS | 97 236 | 1.46 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 407 431 | 1.47 | ||
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1N4007 |
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DIOTEC | 77 132 | 2.89 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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1N4007 |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 126 888 | 1.40 | ||
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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1N4007 |
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MICRO COMMERCIAL COMPONENTS |
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1N4007 |
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MOTOROLA |
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1N4007 |
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YJ ELE-NIC CORP |
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1N4007 |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 800 | 4.54 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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110 354 |
1.66 >100 шт. 0.83 |
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 5 083 | 1.03 | ||
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1N4007 |
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HOTTECH | 126 664 | 1.23 | ||
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1N4007 |
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KLS | 40 800 | 2.07 | ||
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1N4007 |
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YS | 2 311 | 1.36 | ||
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1N4007 |
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YANGJIE | 80 | 1.22 | ||
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1N4007 |
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YANGJIE (YJ) |
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1N4007 |
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MC |
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1N4007 |
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FAIRCHILD |
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1N4007 |
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WUXI XUYANG |
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1N4007 |
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KUU |
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1N4007 |
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CHINA | 14 461 | 1.09 | ||
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1N4007 |
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SUNRISETRON |
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1N4007 |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1N4007 |
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1 |
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1N4007 |
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BL |
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1N4007 |
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SUNTAN | 50 272 | 1.26 | ||
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1N4007 |
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TWGMC | 3 104 |
1.05 >500 шт. 0.35 |
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1N4007 |
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CTK |
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1N4007 |
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JUXING | 85 | 1.73 | ||
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1N4007 |
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ASEMI | 1 | 1.10 | ||
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1N4007 |
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YANGZHOU YANGJIE |
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1N4007 |
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KEEN SIDE | 8 |
1.12 >100 шт. 0.56 |
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2SC5707 |
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NPN транзистор широкого применения TO-251, 15Вт | SANYO | 4 | 143.64 | |
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2SC5707 |
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NPN транзистор широкого применения TO-251, 15Вт | 1 | 127.26 | ||
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2SC5707 |
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NPN транзистор широкого применения TO-251, 15Вт | SAN |
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2SC5707 |
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NPN транзистор широкого применения TO-251, 15Вт | ISCSEMI |
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2SC5707 |
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NPN транзистор широкого применения TO-251, 15Вт | ISC | 1 097 | 27.30 | |
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TSAL6200 |
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Инфракрасный диод d=5мм, 940нм, 60мВт | 12 800 | 9.17 | ||
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TSAL6200 |
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Инфракрасный диод d=5мм, 940нм, 60мВт | VISHAY | 7 064 | 6.20 | |
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TSAL6200 |
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Инфракрасный диод d=5мм, 940нм, 60мВт | Vishay/Semiconductors |
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КТ209Б | 3 088 | 9.25 | |||||
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КТ209Б | КРЕМНИЙ | 826 | 12.47 | ||||
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КТ209Б | МИНСК |
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КТ209Б | НАЛЬЧИК |
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КТ209Б | БРЯНСК | 3 650 | 2.10 | ||||
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КТ209Б | АЛЕКСАНДРОВ |
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КТ209Б | ПЛАНЕТА |
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КТ209Б | ИНТЕГРАЛ |
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КТ209Б | КРЕМН |
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КТ209Б | КРЕМНИЙ ЭЛ | 527 | 4.60 |