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Версия для печати
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 11.3A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | OptiMOS™ |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Current - Continuous Drain (Id) @ 25° C | 9.2A |
| Vgs(th) (Max) @ Id | 2.2V @ 140µA |
| Gate Charge (Qg) @ Vgs | 81nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3520pF @ 25V |
| Power - Max | 1.56W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | P-DSO-8 |