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Power - Max | 820mW |
Input Capacitance (Ciss) @ Vds | 4068pF @ 25V |
Gate Charge (Qg) @ Vgs | 58.9nC @ 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 10.6A |
Drain to Source Voltage (Vdss) | 30V |
Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 7.5A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SOICN |
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Корзина
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