|
|
Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | TrenchMOS™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 37 mOhm @ 1.5A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 5.9A |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Gate Charge (Qg) @ Vgs | 5.8nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 410pF @ 20V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | TO-236AB |