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Версия для печати
| Input Capacitance (Ciss) @ Vds | 4340pF @ 25V |
| Gate Charge (Qg) @ Vgs | 150nC @ 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 160A |
| Drain to Source Voltage (Vdss) | 40V |
| Rds On (Max) @ Id, Vgs | 3.7 mOhm @ 75A, 10V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Power - Max | 200W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
| Корпус | D2PAK |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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IRF1404ZS |
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Hexfet power mosfets discrete n-channel | INTERNATIONAL RECTIFIER |
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IRF1404ZS |
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Hexfet power mosfets discrete n-channel | INFINEON |
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IRF1404ZS |
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Hexfet power mosfets discrete n-channel |
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| IRF1404ZSPBF | INTERNATIONAL RECTIFIER |
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| IRF1404ZSPBF | INFINEON |
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| IRF1404ZSPBF |
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