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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAI/QTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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800
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11.34
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NATIONAL SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NXP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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PHILIPS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DC COMPONENTS
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8 617
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4.89
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FSC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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UTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DIOTEC
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2 718
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4.42
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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МИНСК
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIRCHILD
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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OTHER
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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27 600
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1.06
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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---
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NO TRADEMARK
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MULTICOMP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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HOTTECH
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393
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1.84
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KLS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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КИТАЙ
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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CHINA
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9 576
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1.26
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ZH
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ASEMI
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1 929
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1.66
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HEF4013BT |
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Стандартная логика DUAL D-TYPE FLIP-FLOP -40/+85 C
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PHILIPS
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HEF4013BT |
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Стандартная логика DUAL D-TYPE FLIP-FLOP -40/+85 C
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NXP
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368
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18.15
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HEF4013BT |
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Стандартная логика DUAL D-TYPE FLIP-FLOP -40/+85 C
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28
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22.68
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HEF4013BT |
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Стандартная логика DUAL D-TYPE FLIP-FLOP -40/+85 C
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NXP
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268
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HEF4013BT |
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Стандартная логика DUAL D-TYPE FLIP-FLOP -40/+85 C
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PHILIPS
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878
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HEF4013BT |
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Стандартная логика DUAL D-TYPE FLIP-FLOP -40/+85 C
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NEXPERIA
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HEF4013BT |
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Стандартная логика DUAL D-TYPE FLIP-FLOP -40/+85 C
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4-7 НЕДЕЛЬ
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444
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IRF740 |
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N-канальный полевой транзистор 400В, 125Вт, 10А
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INTERNATIONAL RECTIFIER
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IRF740 |
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N-канальный полевой транзистор 400В, 125Вт, 10А
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VISHAY
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14
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44.69
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IRF740 |
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N-канальный полевой транзистор 400В, 125Вт, 10А
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ST MICROELECTRONICS
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IRF740 |
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N-канальный полевой транзистор 400В, 125Вт, 10А
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992
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24.52
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IRF740 |
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N-канальный полевой транзистор 400В, 125Вт, 10А
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INTERNATIONAL RECTIFIER
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IRF740 |
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N-канальный полевой транзистор 400В, 125Вт, 10А
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ST MICROELECTRONICS SEMI
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IRF740 |
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N-канальный полевой транзистор 400В, 125Вт, 10А
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Vishay/Siliconix
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IRF740 |
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N-канальный полевой транзистор 400В, 125Вт, 10А
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STMicroelectronics
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IRF740 |
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N-канальный полевой транзистор 400В, 125Вт, 10А
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КИТАЙ
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IRF740 |
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N-канальный полевой транзистор 400В, 125Вт, 10А
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IR/VISHAY
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IRF740 |
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N-канальный полевой транзистор 400В, 125Вт, 10А
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MINOS
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1 459
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28.31
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LM2931AD-5.0R2G |
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ON SEMICONDUCTOR
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LM2931AD-5.0R2G |
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ONS
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LM2931AD-5.0R2G |
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ON SEMICONDUCTOR
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1 130
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LM2931AD-5.0R2G |
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5 160
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19.96
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LM2931AD-5.0R2G SO-8 |
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ON SEMICONDUCTOR
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LM2931AD-5.0R2G SO-8 |
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