|
Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 390 mOhm @ 900mA, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 1.7A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 5.9nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 219pF @ 30V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
|
ZXMP6A13G (MOSFET) 60V P-CHANNEL ENHANCEMENT MODE MOSFET
Производитель:
|