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Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | STripFET™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 1A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2.2A |
| Vgs(th) (Max) @ Id | 600mV @ 250µA |
| Gate Charge (Qg) @ Vgs | 4.7nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 315pF @ 15V |
| Power - Max | 1.6W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | SOT-23-6 |
| Корпус | SOT-23-6 |
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STT3PF20V (MOSFET) P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET™ II POWER MOSFET
Производитель:
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