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Версия для печати
| Серия | STripFET™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 30A, 10V |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain (Id) @ 25° C | 60A |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Gate Charge (Qg) @ Vgs | 84nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3940pF @ 15V |
| Power - Max | 100W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
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STD100NH02L (MOSFET) N-channel 24V - 0.0042? - 60A - DPAK - IPAK STripFET™ II Power MOSFET
Производитель:
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