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Версия для печати
| Серия | STripFET™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 40A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 136nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 4850pF @ 25V |
| Power - Max | 300W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
| Корпус | D2PAK |
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STB80NF55L-06 (MOSFET) N-CHANNEL 55V - 0.005 W - 80A D?PAK STripFET™ II POWER MOSFET
Производитель:
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