|
Версия для печати
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 40A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | STripFET™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 110nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 5500pF @ 25V |
| Power - Max | 300W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Корпус | I2PAK |
|
STB80NF03L-04 (MOSFET) N-CHANNEL 30V - 0.0035 W - 80A D2PAK/I2PAK STripFET™ II POWER MOSFET
Производитель:
|