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Версия для печати
| Rds On (Max) @ Id, Vgs | 3.9 mOhm @ 20A, 10V |
| FET Feature | Standard |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | TrenchFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 35A |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 183nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 6000pF @ 10V |
| Power - Max | 52W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | PowerPAK® 1212-8 |
| Корпус | PowerPAK® 1212-8 |
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Si7615DN (MOSFET) P-Channel 20-V (D-S) MOSFET
Производитель:
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