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Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | 2 P-Channel (Dual) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 3A, 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 2.4A |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Gate Charge (Qg) @ Vgs | 8nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 467pF @ 6V |
| Power - Max | 700mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 6-WDFN Exposed Pad |
| Корпус | 6-WDFN |
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NTLJD2104P (MOSFET) Power MOSFET ?12 V, ?4.3 A, COOL Dual P?Channel, 2x2 mm, WDFN package
Производитель:
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