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Версия для печати
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Depletion Mode |
| Rds On (Max) @ Id, Vgs | 80 Ohm @ 50mA, 0V |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 100mA |
| Vgs(th) (Max) @ Id | 5V @ 25µA |
| Input Capacitance (Ciss) @ Vds | 120pF @ 25V |
| Power - Max | 1.1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | TO-252, (D-Pak) |
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IXTY01N100D (MOSFET) High Voltage MOSFET
Производитель:
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