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Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 5.7 mOhm @ 25A, 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 81A |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Gate Charge (Qg) @ Vgs | 15nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 1470pF @ 13V |
| Power - Max | 63W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-251-3 Short Leads, IPak, TO-251AA |
| Корпус | I-Pak |
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IRLU8256PbF (MOSFET) 25V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Производитель:
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