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Версия для печати
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | QFET™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 3.3A, 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 6.6A |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 52nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1850pF @ 25V |
| Power - Max | 3.13W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
| Корпус | D²PAK |
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FQB7N80 (MOSFET) 800V N-Channel MOSFET
Производитель:
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