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Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | PowerTrench® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 30 mOhm @ 7.8A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 7.8A |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 27nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 1480pF @ 10V |
| Power - Max | 900mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 6-MLP, 6-MicroFET™ |
| Корпус | MicroFET 2x2 |
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FDMA510PZ (MOSFET) -20V Single P-Channel PowerTrench MOSFET
Производитель:
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