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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 4.2A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4.2A |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) @ Vgs | 7.6nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 727pF @ 20V |
| Power - Max | 1.4W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
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DMP2305U (MOSFET) P-CHANNEL ENHANCEMENT MODE MOSFET
Производитель:
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