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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 150 mOhm @ 950mA, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 1.5A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Input Capacitance (Ciss) @ Vds | 320pF @ 16V |
| Power - Max | 500mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 3-DFN |
| Корпус | DFN1411-3 |
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DMP2104LP (MOSFET) P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Производитель:
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