IRF710
Транзистор полевой N-канальный 400В, 2А
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Версия для печати
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 1.2A, 10V |
| Drain to Source Voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) @ 25° C | 2A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 170pF @ 25V |
| Power - Max | 36W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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LXE1710 Evaluation Kit Также в этом файле: IRF7105
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 97 236 | 1.46 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 407 431 | 1.47 | ||
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1N4007 |
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DIOTEC | 77 132 | 2.89 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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1N4007 |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 126 888 | 1.40 | ||
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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1N4007 |
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MICRO COMMERCIAL COMPONENTS |
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1N4007 |
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MOTOROLA |
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1N4007 |
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YJ ELE-NIC CORP |
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1N4007 |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 800 | 4.54 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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110 354 |
1.66 >100 шт. 0.83 |
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 5 083 | 1.03 | ||
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1N4007 |
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HOTTECH | 126 664 | 1.23 | ||
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1N4007 |
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KLS | 40 800 | 2.07 | ||
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1N4007 |
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YS | 2 311 | 1.36 | ||
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1N4007 |
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YANGJIE | 80 | 1.22 | ||
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1N4007 |
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YANGJIE (YJ) |
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1N4007 |
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MC |
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1N4007 |
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FAIRCHILD |
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1N4007 |
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WUXI XUYANG |
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1N4007 |
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KUU |
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1N4007 |
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CHINA | 14 461 | 1.09 | ||
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1N4007 |
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SUNRISETRON |
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1N4007 |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1N4007 |
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1 |
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1N4007 |
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BL |
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1N4007 |
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SUNTAN | 50 272 | 1.26 | ||
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1N4007 |
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TWGMC | 3 104 |
1.05 >500 шт. 0.35 |
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1N4007 |
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CTK |
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1N4007 |
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JUXING | 85 | 1.73 | ||
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1N4007 |
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ASEMI | 1 | 1.10 | ||
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1N4007 |
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YANGZHOU YANGJIE |
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1N4007 |
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KEEN SIDE | 8 |
1.12 >100 шт. 0.56 |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | MICRO SEMICONDUCTOR |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | MOTOROLA |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | SMK |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | DC COMPONENTS |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | SEMICRON |
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1N5383B |
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Стабилитрон 5W, 150V, 5% |
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30.00 | ||
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1N5383B |
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Стабилитрон 5W, 150V, 5% | MICRO SEMICONDUCTOR(MICROSEMI) |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | MOTOROLA | 19 |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | Microsemi Commercial Components Group |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | ON Semiconductor |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | MICROSEMI CORP |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | ON SEMICONDUCTOR | 92 |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | КИТАЙ |
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1N5383B |
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Стабилитрон 5W, 150V, 5% | DIOTEC |
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IRFZ34NPBF |
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Полевой транзистор N-канальный 55В 26А | INTERNATIONAL RECTIFIER |
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IRFZ34NPBF |
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Полевой транзистор N-канальный 55В 26А |
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IRFZ34NPBF |
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Полевой транзистор N-канальный 55В 26А | INTERNATIONAL RECTIFIER | 152 |
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IRFZ34NPBF |
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Полевой транзистор N-канальный 55В 26А | INFINEON |
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RLB0914-102KL |
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Катушка индуктивности на ферритовом сердечнике экранированная 1мГн, 300мА, 10%, 2.1Ом | BOURNS | 10 654 | 33.06 | |
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RLB0914-102KL |
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Катушка индуктивности на ферритовом сердечнике экранированная 1мГн, 300мА, 10%, 2.1Ом |
|
57.60 | ||
| VS-10CTQ150PBF | VISHAY/IR |
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| VS-10CTQ150PBF | VISHAY |
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| VS-10CTQ150PBF |
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