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Версия для печати
| Корпус | TO-126B-A1 |
| Корпус (размер) | TO-126-3 |
| Тип монтажа | Выводной |
| Frequency - Transition | 300MHz |
| Power - Max | 4W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 5V |
| Current - Collector Cutoff (Max) | 10µA |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 15mA, 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 150mA |
| Transistor Type | NPN |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
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2SC3611 (Мощные биполярные транзисторы) Silicon Npn Epitaxial Planar Type
Производитель:
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