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FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 12.1 mOhm @ 62A, 10V |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 195A |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) @ Vgs | 120nC @ 10V |
Input Capacitance (Ciss) @ Vds | 5270pF @ 50V |
Power - Max | 375W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Корпус | D2PAK |
IRFS4115PbF (MOSFET) 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Производитель:
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