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Версия для печати
| Gate Charge (Qg) @ Vgs | 36nC @ 10V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Current - Continuous Drain (Id) @ 25° C | 3.4A |
| Drain to Source Voltage (Vdss) | 200V |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 4.2A, 10V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 1500pF @ 25V |
| Power - Max | 2.8W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | DirectFET™ Isometric MZ |
| Корпус | DIRECTFET™ MZ |