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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 7.3 mOhm @ 14A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Gate Charge (Qg) @ Vgs | 17nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 1430pF @ 15V |
| Power - Max | 2.2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | DirectFET™ Isometric SQ |
| Корпус | DIRECTFET™ SQ |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| BTS6163D | INFINEON | 1 520 | 229.23 | |||||
| BTS6163D | Infineon Technologies |
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| BTS6163D |
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| BTS6163D | INFINEON |
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| BTS6163D | 4-7 НЕДЕЛЬ | 54 |
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N-channel hexfet power mosfet | INTERNATIONAL RECTIFIER |
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