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Версия для печати
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 40A, 10V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | STripFET™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 182nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 5500pF @ 25V |
| Power - Max | 300W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
| Корпус | D2PAK |
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STB80NF10 (MOSFET) N-channel 100V - 0.012? - 80A - D2PAK Low gate charge STripFET™ II Power MOSFET
Производитель:
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