| |
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
FAI/QTC
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
FAIR
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
ON SEMICONDUCTOR
|
800
|
12.49
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
MOTOROLA
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
NATIONAL SEMICONDUCTOR
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
NXP
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
PHILIPS
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
TOSHIBA
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
DC COMPONENTS
|
16 056
|
6.24
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
FSC
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
UTC
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
DIOTEC
|
496
|
4.04
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
МИНСК
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
FAIRCHILD
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
MOTOROLA
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
ON SEMICONDUCTOR
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
OTHER
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
NS
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
KEC
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
|
12 888
|
1.07
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
TOSHIBA
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
---
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
NO TRADEMARK
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
MULTICOMP
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
HOTTECH
|
60
|
1.38
>100 шт. 0.69
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
KLS
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
КИТАЙ
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
CHINA
|
9 576
|
1.15
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
ZH
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
ASEMI
|
3 151
|
1.07
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
KEEN SIDE
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
MERRYELC
|
|
|
|
|
|
2N5551 |
|
Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
RUME
|
|
|
|
|
|
2SA1013 |
|
Биполярный транзистор PNP 160V, 1A, 0.9W, 15MHz
|
TOSHIBA
|
|
|
|
|
|
2SA1013 |
|
Биполярный транзистор PNP 160V, 1A, 0.9W, 15MHz
|
FAIR
|
|
|
|
|
|
2SA1013 |
|
Биполярный транзистор PNP 160V, 1A, 0.9W, 15MHz
|
|
|
13.32
|
|
|
|
2SA1013 |
|
Биполярный транзистор PNP 160V, 1A, 0.9W, 15MHz
|
TOS
|
|
|
|
|
|
2SA1013 |
|
Биполярный транзистор PNP 160V, 1A, 0.9W, 15MHz
|
ON SEMI/FAIRCH
|
|
|
|
|
|
2SA1013 |
|
Биполярный транзистор PNP 160V, 1A, 0.9W, 15MHz
|
ONSEMICONDUCTOR
|
|
|
|
|
|
2SA1013 |
|
Биполярный транзистор PNP 160V, 1A, 0.9W, 15MHz
|
JCET
|
|
|
|
|
|
2SA1013 |
|
Биполярный транзистор PNP 160V, 1A, 0.9W, 15MHz
|
ONS
|
|
|
|
|
|
2SC2625 |
|
Биполярный транзистор Si-N, 450/400V, 10A, 80W
|
FUJI ELECTRIC
|
80
|
253.76
|
|
|
|
2SC2625 |
|
Биполярный транзистор Si-N, 450/400V, 10A, 80W
|
FUJITSU
|
|
|
|
|
|
2SC2625 |
|
Биполярный транзистор Si-N, 450/400V, 10A, 80W
|
|
1
|
279.00
|
|
|
|
2SC2625 |
|
Биполярный транзистор Si-N, 450/400V, 10A, 80W
|
FUJ
|
|
|
|
|
|
2SC2625 |
|
Биполярный транзистор Si-N, 450/400V, 10A, 80W
|
FUJI
|
|
|
|
|
|
2SC2625 |
|
Биполярный транзистор Si-N, 450/400V, 10A, 80W
|
КИТАЙ
|
|
|
|
|
|
2SC2625 |
|
Биполярный транзистор Si-N, 450/400V, 10A, 80W
|
ISCSEMI
|
|
|
|
|
|
2SC2625 |
|
Биполярный транзистор Si-N, 450/400V, 10A, 80W
|
INCHANGE
|
32
|
178.42
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
CHINA
|
|
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
MIC
|
1 680
|
4.42
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
DC COMPONENTS
|
13 174
|
10.20
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
|
1 200
|
6.35
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
Micro Commercial Co
|
|
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
ТАЙВАНЬ(КИТАЙ)
|
|
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
GALAXY
|
|
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
KINGTRONICS
|
|
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
КИТАЙ
|
400
|
26.55
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
YJ
|
|
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
LGE
|
1 520
|
8.27
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
SUNTAN
|
160
|
6.59
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
WUXI XUYANG
|
|
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
YANGJIE
|
6 880
|
9.58
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
YANGJIE (YJ)
|
|
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
KOME
|
|
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
TRR
|
|
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
ASEMI
|
108
|
3.94
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
BO
|
2 640
|
4.33
|
|
|
|
6A10 |
|
(P600M) диод 6А, 1000В
|
YANGZHOU YANGJIE
|
|
|
|
|
|
MJE13005 |
|
Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
|
ON SEMICONDUCTOR
|
|
|
|
|
|
MJE13005 |
|
Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
|
ST MICROELECTRONICS
|
|
|
|
|
|
MJE13005 |
|
Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
|
|
|
120.00
|
|
|
|
MJE13005 |
|
Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
|
ONS
|
|
|
|
|
|
MJE13005 |
|
Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
|
ON SEMICONDUCTOR
|
|
|
|
|
|
MJE13005 |
|
Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
MJE13005 |
|
Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
|
INCHANGE SEMIC
|
|
|
|
|
|
MJE13005 |
|
Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
|
MOTOROLA
|
|
|
|
|
|
MJE13005 |
|
Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
|
HOTTECH
|
|
|
|
|
|
MJE13005 |
|
Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
|
ZH
|
|
|
|
|
|
MJE13005 |
|
Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
|
RUME
|
4 480
|
10.80
|
|
|
|
MJE13005 |
|
Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
|
TRR
|
6 824
|
11.34
|
|
|
|
MJE13005 |
|
Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
|
UTC
|
9 440
|
24.67
|
|