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 Версия для печати
Версия для печати
                        
                        
                    
                                | Current - Continuous Drain (Id) @ 25° C | 375mA | 
| Drain to Source Voltage (Vdss) | 250V | 
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 300mA, 10V | 
| FET Feature | Logic Level Gate | 
| FET Type | MOSFET N-Channel, Metal Oxide | 
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | 
| Vgs(th) (Max) @ Id | 2V @ 1mA | 
| Input Capacitance (Ciss) @ Vds | 120pF @ 25V | 
| Power - Max | 1.5W | 
| Тип монтажа | Поверхностный | 
| Корпус (размер) | TO-261-4, TO-261AA | 
| Корпус | SOT-223 | 
| BSP126 (MOSFET) N-channel enhancement mode vertical D-MOS transistor 
                                        Производитель: 
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