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 Версия для печати
Версия для печати
                        
                        
                    
                                | FET Type | MOSFET P-Channel, Metal Oxide | 
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | 
| FET Feature | Logic Level Gate | 
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 1A, 10V | 
| Drain to Source Voltage (Vdss) | 30V | 
| Current - Continuous Drain (Id) @ 25° C | 3A | 
| Vgs(th) (Max) @ Id | 2.8V @ 1mA | 
| Gate Charge (Qg) @ Vgs | 25nC @ 10V | 
| Input Capacitance (Ciss) @ Vds | 250pF @ 20V | 
| Power - Max | 1.65W | 
| Тип монтажа | Поверхностный | 
| Корпус (размер) | TO-261-4, TO-261AA | 
| Корпус | SOT-223 | 
| BSP250 (MOSFET) P-channel enhancement mode vertical D-MOS transistor 
                                        Производитель: 
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