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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAI/QTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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800
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12.49
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NATIONAL SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NXP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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PHILIPS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DC COMPONENTS
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15 848
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6.90
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FSC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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UTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DIOTEC
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496
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4.93
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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МИНСК
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIRCHILD
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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OTHER
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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4 888
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1.07
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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---
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NO TRADEMARK
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MULTICOMP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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HOTTECH
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34
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1.54
>100 шт. 0.77
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KLS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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КИТАЙ
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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CHINA
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9 576
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1.26
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ZH
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ASEMI
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2 036
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1.20
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEEN SIDE
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MERRYELC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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RUME
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2SA1306 |
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Биполярный транзистор Si-P, 160V, 1,5A, 20W, 100MHz
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SANYO
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2SA1306 |
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Биполярный транзистор Si-P, 160V, 1,5A, 20W, 100MHz
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TOSHIBA
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2SA1306 |
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Биполярный транзистор Si-P, 160V, 1,5A, 20W, 100MHz
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TOS
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2SA1306 |
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Биполярный транзистор Si-P, 160V, 1,5A, 20W, 100MHz
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13
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167.40
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2SA1306 |
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Биполярный транзистор Si-P, 160V, 1,5A, 20W, 100MHz
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ISCSEMI
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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ST MICROELECTRONICS
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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TEXAS INSTRUMENTS
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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FAIR
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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NATIONAL SEMICONDUCTOR
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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ST MICROELECTRONICS SEMI
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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FAIRCHILD
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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STMicroelectronics
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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Fairchild Optoelectronics Group
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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ST MICROELECTR
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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ГЕРМАНИЯ
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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КИТАЙ
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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NATIONAL SEMICONDUCTOR
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144
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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TEXAS
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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12
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74.40
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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STMICROELECTR
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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1
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LF347N |
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4xOp-Amp JFET +-18V 13V/us
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4-7 НЕДЕЛЬ
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369
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LM1458N |
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ИМС 2xОперационный усилитель +-18В LP DIP8
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NATIONAL SEMICONDUCTOR
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LM1458N |
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ИМС 2xОперационный усилитель +-18В LP DIP8
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FAIR
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LM1458N |
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ИМС 2xОперационный усилитель +-18В LP DIP8
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62.64
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LM1458N |
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ИМС 2xОперационный усилитель +-18В LP DIP8
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NSC
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LM1458N |
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ИМС 2xОперационный усилитель +-18В LP DIP8
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Fairchild Semiconductor
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LM1458N |
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ИМС 2xОперационный усилитель +-18В LP DIP8
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NATIONAL SEMICONDUCTOR
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LM1458N |
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ИМС 2xОперационный усилитель +-18В LP DIP8
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МАЛАЙЗИЯ
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LM1458N |
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ИМС 2xОперационный усилитель +-18В LP DIP8
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4-7 НЕДЕЛЬ
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431
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VS-30CPQ150 |
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VISHAY
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VS-30CPQ150 |
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INTERNATIONAL RECTIFIER
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4
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158.10
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