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Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 30A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 240nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 9000pF @ 25V |
| Power - Max | 187W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
| Корпус | TO-263 (D2Pak) |
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SUB75P03-07 (MOSFET) P-Channel 30-V(D-S) 175°C MOSFET
Производитель:
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