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Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | TrenchMOS™ |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 18.5 mOhm @ 9A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) @ Vgs | 11.8nC @ 5V |
Power - Max | 2.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SO |
SI4800 (Полевые N-канальные транзисторы) N-channel Enhancement Mode Field-effect Transistor
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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SI4336DY-T1 | SILICONIX |
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SI4336DY-T1 | VISHAY |
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SI4336DY-T1 |
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542.00 | |||||
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SI4336DY-T1 | SILICONIX | 15 |
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SI4392DY | SILICONIX |
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SI4392DY | SILICONIX |
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SI4835DY | FAIR |
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SI4835DY | VISHAY |
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SI4835DY | FAIRCHILD |
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SI4835DY |
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170.00 | |||||
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SI4835DY | FAIRCHILD |
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SN65LVDS1D | TEXAS INSTRUMENTS |
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SN65LVDS1D |
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300.00 | ||||||
SN65LVDS1D | TEXAS INSTRUMENTS |
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SN65LVDS1D | TEXAS |
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SN65LVDS1D | 4-7 НЕДЕЛЬ | 752 |
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SN65LVDS2DR | TEXAS INSTRUMENTS |
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SN65LVDS2DR |
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336.00 | ||||||
SN65LVDS2DR | TEXAS INSTRUMENTS |
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SN65LVDS2DR | 4-7 НЕДЕЛЬ | 424 |
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Корзина
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