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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Forward (Vf) (Max) @ If | 2.1V @ 8A |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 8A |
| Current - Reverse Leakage @ Vr | 100µA @ 600V |
| Diode Type | Standard |
| Скорость | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35ns |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-2 |
| Корпус | TO-220AC |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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1N4007 |
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DC COMPONENTS | 85 474 | 1.54 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 366 072 | 1.48 | ||
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1N4007 |
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DIOTEC | 71 820 | 2.84 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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1N4007 |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 346 177 | 1.25 | ||
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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1N4007 |
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MICRO COMMERCIAL COMPONENTS |
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1N4007 |
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MOTOROLA |
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1N4007 |
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YJ ELE-NIC CORP |
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1N4007 |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 816 | 5.47 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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1 916 | 3.70 | |||
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 27 | 1.54 | ||
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1N4007 |
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HOTTECH | 128 736 |
1.96 >100 шт. 0.98 |
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1N4007 |
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KLS |
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1N4007 |
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YS | 2 311 | 1.38 | ||
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1N4007 |
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YANGJIE | 72 992 | 1.38 | ||
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1N4007 |
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YANGJIE (YJ) |
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1N4007 |
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MC |
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1N4007 |
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FAIRCHILD |
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1N4007 |
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WUXI XUYANG |
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1N4007 |
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KUU | 4 |
0.99 >500 шт. 0.33 |
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1N4007 |
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CHINA |
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1N4007 |
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SUNRISETRON |
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1N4007 |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1N4007 |
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1 |
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1N4007 |
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BL |
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1N4007 |
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SUNTAN | 63 234 | 1.18 | ||
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1N4007 |
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TWGMC | 31 197 |
1.11 >500 шт. 0.37 |
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1N4007 |
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CTK |
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1N4007 |
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JUXING | 85 | 2.25 | ||
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1N4007 |
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ASEMI | 1 |
1.46 >100 шт. 0.73 |
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1N4007 |
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YANGZHOU YANGJIE |
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1N4007 |
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KEEN SIDE | 454 482 |
1.12 >100 шт. 0.56 |
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | INTERNATIONAL RECTIFIER | 8 | 347.46 | |
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | VISHAY |
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | IXYS |
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | 4 | 491.40 | ||
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | IXYS CORPORATION |
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | Vishay/Siliconix |
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | КИТАЙ |
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | VISHAY/IR |
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | 1 |
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IRG4PH50UD |
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Транзистор IGBT модуль единичный | INTERNATIONAL RECTIFIER |
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IRG4PH50UD |
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Транзистор IGBT модуль единичный |
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660.00 | ||
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IRG4PH50UD |
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Транзистор IGBT модуль единичный | МЕКСИКА |
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IRG4PH50UD |
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Транзистор IGBT модуль единичный | INFINEON |
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IRG4PH50UD |
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Транзистор IGBT модуль единичный | UNKNOWN |
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IRG4PH50UD |
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Транзистор IGBT модуль единичный | IR/VISHAY | 27 | 750.30 | |
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SPA20N60C3 | INFINEON |
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SPA20N60C3 | INFINEON |
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SPA20N60C3 | Infineon Technologies |
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SPA20N60C3 |
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UF5408 |
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Диод 1000V, 3A, 75nS | DC COMPONENTS | 7 076 | 5.85 | |
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UF5408 |
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Диод 1000V, 3A, 75nS | MICRO SEMICONDUCTOR |
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UF5408 |
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Диод 1000V, 3A, 75nS | MCC |
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UF5408 |
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Диод 1000V, 3A, 75nS | DIOTEC |
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UF5408 |
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Диод 1000V, 3A, 75nS | SMK |
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UF5408 |
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Диод 1000V, 3A, 75nS | 208 | 4.81 | ||
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UF5408 |
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Диод 1000V, 3A, 75nS | GALAXY |
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UF5408 |
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Диод 1000V, 3A, 75nS | КИТАЙ |
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UF5408 |
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Диод 1000V, 3A, 75nS | MIC | 6 473 | 4.33 | |
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UF5408 |
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Диод 1000V, 3A, 75nS | GALAXY ME |
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UF5408 |
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Диод 1000V, 3A, 75nS | LGE |
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UF5408 |
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Диод 1000V, 3A, 75nS | HOTTECH |
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UF5408 |
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Диод 1000V, 3A, 75nS | KLS |
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UF5408 |
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Диод 1000V, 3A, 75nS | OLITECH |
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UF5408 |
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Диод 1000V, 3A, 75nS | 1 |
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UF5408 |
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Диод 1000V, 3A, 75nS | SUNTAN | 1 011 | 4.79 | |
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UF5408 |
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Диод 1000V, 3A, 75nS | GOODWORK | 7 280 | 7.35 | |
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UF5408 |
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Диод 1000V, 3A, 75nS | KEEN SIDE |
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UF5408 |
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Диод 1000V, 3A, 75nS | YANGJIE |
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