RHRP860
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Forward (Vf) (Max) @ If | 2.1V @ 8A |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 8A |
| Current - Reverse Leakage @ Vr | 100µA @ 600V |
| Diode Type | Standard |
| Скорость | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35ns |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-2 |
| Корпус | TO-220AC |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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1N4007 |
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DC COMPONENTS | 13 765 | 2.31 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 318 596 | 1.21 | ||
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1N4007 |
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DIOTEC | 68 568 | 2.87 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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1N4007 |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 120 685 | 2.62 | ||
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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1N4007 |
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MICRO COMMERCIAL COMPONENTS |
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1N4007 |
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MOTOROLA |
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1N4007 |
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YJ ELE-NIC CORP |
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1N4007 |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 800 | 5.47 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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108 389 |
1.52 >100 шт. 0.76 |
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 22 | 1.64 | ||
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1N4007 |
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HOTTECH | 58 304 |
1.22 >100 шт. 0.61 |
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1N4007 |
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KLS |
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1N4007 |
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YS | 2 311 | 1.21 | ||
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1N4007 |
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YANGJIE | 56 896 | 1.47 | ||
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1N4007 |
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YANGJIE (YJ) |
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1N4007 |
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MC |
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1N4007 |
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FAIRCHILD | 1 416 | 1.21 | ||
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1N4007 |
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WUXI XUYANG |
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1N4007 |
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KUU |
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1N4007 |
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CHINA |
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1N4007 |
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SUNRISETRON |
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1N4007 |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1N4007 |
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1 |
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1N4007 |
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BL |
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1N4007 |
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SUNTAN | 15 197 | 1.27 | ||
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1N4007 |
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TWGMC | 95 482 | 1.11 | ||
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1N4007 |
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CTK |
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1N4007 |
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JUXING |
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1N4007 |
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ASEMI | 1 |
1.56 >100 шт. 0.78 |
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1N4007 |
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YANGZHOU YANGJIE |
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1N4007 |
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KEEN SIDE | 306 164 |
1.18 >100 шт. 0.59 |
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1N4007 |
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MERRYELC |
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1N4007 |
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82582 |
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1N4007 |
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81682 |
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1N4007 |
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TRR | 442 640 |
1.26 >100 шт. 0.63 |
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1N4007 |
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71682 |
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | INTERNATIONAL RECTIFIER | 8 | 347.46 | |
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | VISHAY | 1 | 285.90 | |
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | IXYS |
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | 4 | 491.40 | ||
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | IXYS CORPORATION |
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | Vishay/Siliconix |
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | КИТАЙ |
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | VISHAY/IR |
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W | 1 |
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IRG4PH50UD |
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Транзистор IGBT модуль единичный | INTERNATIONAL RECTIFIER |
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IRG4PH50UD |
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Транзистор IGBT модуль единичный |
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660.00 | ||
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IRG4PH50UD |
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Транзистор IGBT модуль единичный | МЕКСИКА |
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IRG4PH50UD |
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Транзистор IGBT модуль единичный | INFINEON |
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IRG4PH50UD |
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Транзистор IGBT модуль единичный | UNKNOWN |
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IRG4PH50UD |
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Транзистор IGBT модуль единичный | IR/VISHAY | 41 | 1 125.45 | |
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SPA20N60C3 | INFINEON |
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SPA20N60C3 | INFINEON |
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SPA20N60C3 | Infineon Technologies |
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SPA20N60C3 |
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UF5408 |
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Диод 1000V, 3A, 75nS | DC COMPONENTS | 487 | 11.89 | |
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UF5408 |
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Диод 1000V, 3A, 75nS | MICRO SEMICONDUCTOR |
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UF5408 |
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Диод 1000V, 3A, 75nS | MCC |
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UF5408 |
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Диод 1000V, 3A, 75nS | DIOTEC |
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UF5408 |
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Диод 1000V, 3A, 75nS | SMK |
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UF5408 |
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Диод 1000V, 3A, 75nS | 12 | 36.54 | ||
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UF5408 |
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Диод 1000V, 3A, 75nS | GALAXY |
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UF5408 |
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Диод 1000V, 3A, 75nS | КИТАЙ |
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UF5408 |
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Диод 1000V, 3A, 75nS | MIC | 3 714 | 8.91 | |
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UF5408 |
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Диод 1000V, 3A, 75nS | GALAXY ME |
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UF5408 |
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Диод 1000V, 3A, 75nS | LGE |
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UF5408 |
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Диод 1000V, 3A, 75nS | HOTTECH |
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UF5408 |
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Диод 1000V, 3A, 75nS | KLS |
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UF5408 |
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Диод 1000V, 3A, 75nS | OLITECH |
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UF5408 |
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Диод 1000V, 3A, 75nS | 1 |
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UF5408 |
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Диод 1000V, 3A, 75nS | SUNTAN | 74 | 5.12 | |
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UF5408 |
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Диод 1000V, 3A, 75nS | GOODWORK | 4 960 | 7.85 | |
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UF5408 |
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Диод 1000V, 3A, 75nS | KEEN SIDE |
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UF5408 |
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Диод 1000V, 3A, 75nS | YANGJIE |
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UF5408 |
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Диод 1000V, 3A, 75nS | 599 |
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