RFD14N05LSM9A
|
|
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 14A, 5V |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 670pF @ 25V |
| Power - Max | 48W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | TO-252AA |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
 |
 |
ADG1422BRMZ |
|
Analog Devices Inc |
|
|
||
|
|
|
ADG1422BRMZ |
|
ANALOG |
|
|
||
|
|
|
ADG1422BRMZ |
|
ANALOG DEVICES |
|
|
||
|
|
|
ADG1422BRMZ |
|
|
|
|||
|
|
|
ADG1422BRMZ |
|
4-7 НЕДЕЛЬ | 376 |
|
||
| ADG659YRUZ |
|
4:1 MUX +/-5V Supply Rate to +125° I.C. | ANALOG DEVICES | 228 | 341.22 | |||
| ADG659YRUZ |
|
4:1 MUX +/-5V Supply Rate to +125° I.C. |
|
|
||||
| ADG659YRUZ |
|
4:1 MUX +/-5V Supply Rate to +125° I.C. | ANALOG |
|
|
|||
| ADG659YRUZ |
|
4:1 MUX +/-5V Supply Rate to +125° I.C. | Analog Devices Inc |
|
|
|||
| ADG659YRUZ |
|
4:1 MUX +/-5V Supply Rate to +125° I.C. | ANALOG DEVICES |
|
|
|||
| ADG659YRUZ |
|
4:1 MUX +/-5V Supply Rate to +125° I.C. | 4-7 НЕДЕЛЬ | 584 |
|
|||
| B65804P2204X000 | EPCOS |
|
|
|||||
| B65804P2204X000 |
|
|
||||||
| B65804P2204X000 | TDK-EPC | 10 641 | 7.88 | |||||
| MAX44211ETP | MAX |
|
|
|||||
| MAX44211ETP |
|
|
||||||
| MAX44211ETP | MAXIM | 12 | 588.00 | |||||
| MAX44211ETP | 4-7 НЕДЕЛЬ | 67 |
|
|||||
| RC0603FR-07511RL | YAGEO | 380 266 |
0.50 >1000 шт. 0.10 |
|||||
| RC0603FR-07511RL | YAGEO |
|
|
|||||
| RC0603FR-07511RL |
|
|
