|
|
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 4.7K |
| Resistor - Emitter Base (R2) (Ohms) | 4.7K |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| Power - Max | 250mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SMT3 |
|
PDTA143EK (Универсальные биполярные PNP транзисторы) PNP resistor-equipped transistor
Производитель:
|
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| CC0805JRNP09BN331 | YAGEO |
|
|
|||||
| CC0805JRNP09BN331 | ТАЙВАНЬ (КИТАЙ) |
|
|
|||||
| CC0805JRNP09BN331 | ТАЙВАНЬ(КИТАЙ) |
|
|
|||||
|
|
LM317EMP | NATIONAL SEMICONDUCTOR |
|
|
||||
|
|
LM317EMP | NSC |
|
|
||||
|
|
LM317EMP | NATIONAL SEMICONDUCTOR |
|
|
||||
|
|
LM317EMP | КИТАЙ |
|
|
||||
|
|
LM317EMP | TEXAS INSTRUMENTS |
|
|
||||
|
|
LM317EMP | TEXAS |
|
|
||||
|
|
LM317EMP | TEXAS INSTRUMENTS |
|
|
||||
|
|
LM317EMP |
|
66.68 | |||||
|
|
LM317EMP | FULIHAO TECH | 1 200 | 17.56 | ||||
|
|
LM317EMP | 1 |
|
|
||||
|
|
LM317EMP | FULIHAO | 383 | 10.97 | ||||
|
|
LM317EMP | 4-7 НЕДЕЛЬ | 326 |
|
||||
| RC0805FR-071K02L | YAGEO | 47 821 |
0.70 >1000 шт. 0.14 |
|||||
| RC0805FR-071K02L |
|
|
||||||
| RC0805FR-0722RL | YAGEO | 28 686 |
0.55 >1000 шт. 0.11 |
|||||
| RC0805FR-0722RL | YAGEO | 20 000 |
|
|||||
| RC0805FR-0722RL |
|
|
||||||
|
|
КД2995Б |
|
152.72 | |||||
|
|
КД2995Б | ТОМИЛИНО |
|
|