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Версия для печати
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 10.5 mOhm @ 20A, 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 7.6A |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 9.5nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 1330pF @ 20V |
| Power - Max | 1.04W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
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NTP65N02R (MOSFET) Power MOSFET 65 A, 24 V N-Channel TO-220
Производитель:
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