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Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 6A, 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 3.8A |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 3.76nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 225pF @ 20V |
| Power - Max | 1.14W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
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NTD23N03R (MOSFET) Power MOSFET 23 Amps, 25 Volts, N?Channel DPAK
Производитель:
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