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Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 20A, 10V |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain (Id) @ 25° C | 15.9A |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 28nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 3440pF @ 20V |
| Power - Max | 1.98W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
| Корпус | D2PAK |
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NTB125N02R (MOSFET) Power MOSFET 125 A, 24 V N?Channel D2PAK
Производитель:
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